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PlasPac 300 Plasma Clean/Etch System:
| RIE System for Wafer Cleaning and Resist Ashing Processes in Volume |
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Specifications:
- 2.5 kW @ RF Frequency (500 W per Electrode)
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Wafer size
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Number of wafers
per cycle time
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Throughput
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4", 5", 6"
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25 wafers
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~ 75 wafers / hour*
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8"
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20 wafers
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~ 60 wafers / hour*
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8"
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20 wafers
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~ 40 wafers / hour**
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12"
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5 wafers
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~ 15 wafers / hour*
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* for Al pad cleaning
** for stripping of backside photo resist
- Maximum Flexibility: 4”, 5”, 6”, 8”, 12”
- Process Monitoring and Quality Data Base
- Flexible Recipe Management
- Size: 1200 x 1300 x 2200 mm (D x W x H)
- Main Power supply: 11,5 kW
- Vacuum Supply: pumping capacity 410 m3/h (50 Hz), Ultimate pressure 5E-3 mbar
- Vacuum chamber ID 850 x 850 x 850mm
- Gas supply: 2-4 mass flow controllers Cooling Unit: Total refrigerating capacity 6 kw
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